sot-23-6l plastic-encapsulate mosfets cj l 3443 p -channel 20-v(d-s) mosfet feature z fast switching speed z low gate charge z high performance trench te chnology for extremely low r ds(on) description this p-channel mosfet is produced using advanc ed powertrench process that has been especially tailor ed to minimize on-state resistance and yet maintain low gate charge fo r superior switching performance. these devices have been designed to of fer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical. marking: maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds -20 continuous gate-source voltage v gs 8 v continuous drain current i d -4 a power dissipation p d 0.35 w thermal resistance from junction to ambient r ja 357 /w operating temperature t j 150 storage temperature t stg -55 ~+150 so t -23-6l 1. gate 2. drain 3. source 3 5 6 4 1 2 3 r43 d d d d g s 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,sep,2012
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max units off characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =-250a -20 v gate-body leakage i gss v ds =0v, v gs =8v 100 na zero gate voltage drain current i dss v ds =-16v, v gs =0v -1.0 a on characteristics gate-threshold voltage v gs(th) v ds =v gs , i d =-0.25ma -0.40 -1.50 v v gs =-4.5v, i d =-4a 0.065 static drain-source on-resistance (note 1) r ds(on) v gs =-2.5v, i d =-3.2a 0.10 ? forward transconductance (note 1) g fs v ds =-5v, i d =-4a 8 s dynamic characteristics (note 2) input capacitance c iss 640 output capacitance c oss 180 reverse transfer capacitance c rss v ds =-10,v gs =0v, f=1mhz 90 pf switching characteristics turn-on delay time (note 1,2) t d(on) 20 rise time (note 1,2) t r 30 turn-off delay time (note 1,2) t d(off) 42 fall time (note 1,2) t f v gs =-4.5v, v dd =-10v, i d =-1a, r gen =6 ? 55 ns drain-source body diode characteristics body diode forward voltage (note 1) v sd i s =-1.3a, v gs = 0v -1.2 v notes: 1. pulse test ; pulse width 300s, duty cycle 2%. 2. these parameters have no way to verify. 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,sep,2012
-0.0 -0.5 -1.0 -1.5 -2.0 -0 -1 -2 -3 -4 -5 -0.0 -0.4 -0.8 -1.2 -1.6 -1e-3 -0.01 -0.1 -1 -10 -0 -1 -2 -3 -4 -0 -4 -8 -12 -16 -20 -0 -4 -8 -12 -16 -20 0 20 40 60 80 100 -0 -2 -4 -6 -8 0 100 200 300 400 500 t a =25 pulsed t a =25 pulsed transfer characteristics drain current i d (a) gate to source voltage v gs (v) -3e-3 -0.03 t a =25 pulsed -20 -0.3 -3 v sd i s ?? source current i s (a) source to drain voltage v sd (v) v gs =-2.0v v gs =-1.5v v gs =-4.5v,-4.0v,-3.5v,-3.0v,-2.5v output characteristics drain current i d (a) drain to source voltage v ds (v) cj l 3443 v gs =-2.5v v gs =-4.5v on-resistance r ds(on) (m ) drain current i d (a) t a =25 pulsed t a =25 pulsed i d =-4.0a i d r ds(on) ?? v gs r ds(on) ?? on-resistance r ds(on) (m ) gate to source voltage v gs (v) 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,sep,2012
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